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| inchange semiconductor product specification silicon npn power transistors 2n3054 2N3054A description ? with to-66 package applications ? designed for general purpose switching and amplifier applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 90 v v ceo collector-emitter voltage open base 55 v v ebo emitter-base voltage open collector 7 v i c collector current 4 a i b base current 2 a 2n3054 25 p d power dissipation 2N3054A t c =25 ?? 75 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit 2n3054 7.0 r th j-c thermal resistance junction to case 2N3054A 2.33 ??/w fig.1 simplified outline (to-66) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2n3054 2N3054A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter breakdown voltage i c =0.1a ; i b =0 55 v v cesat-1 collector-emitter saturation voltage i c =0.5a ;i b =50ma 1.0 v v cesat-2 collector-emitter saturation voltage i c =3a; i b =1a 6.0 v v be base -emitter on voltage i c =0.5a ; v ce =4v 1.7 v i cev collector cut-off current v ce =90v;v be(off) =1.5v t c =150 ?? 1.0 6.0 ma i ceo collector cut-off current v ce =30v; i b =0 0.5 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe-1 dc current gain i c =0.1a ; v ce =10v 40 h fe-2 dc current gain i c =1a ; v ce =2v 8 80 f t transition frequency i c =0.2a ; v ce =10v;f=1mhz 3.0 inchange semiconductor product specification 3 silicon npn power transistors 2n3054 2N3054A package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon npn power transistors 2n3054 2N3054A |
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